摘要
This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si （001） substrate by metal-organic vapor-phase epitaxy, Two hexagonal GaAs regions with high density of stacking faults parallel to Si {111 } surfaces are observed. A strain-relieved and defect-free cubic phase GaAs was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of GaAs/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of GaAs selectively grown on this artificially manipulated surface.
This letter reports the nanoscale spatial phase modulation of GaAs growth in V-grooved trenches fabricated on a Si （001） substrate by metal-organic vapor-phase epitaxy, Two hexagonal GaAs regions with high density of stacking faults parallel to Si {111 } surfaces are observed. A strain-relieved and defect-free cubic phase GaAs was achieved above these highly defective regions. High-resolution transmission electron microscopy and fast Fourier transforms analysis were performed to characterize these regions of GaAs/Si interface. We also discussed the strain relaxation mechanism and phase structure modulation of GaAs selectively grown on this artificially manipulated surface.
基金
Project supported by the National Science and Technology Major Project of Science and Technology of China(Grant No.2011ZX02708)
the National Natural Science Foundation of China(Grant No.61504137)
