BaTiO_3复合硅胶对IGBT模块内部电场分布的影响

Influences of BaTiO_3 composite silicone gel on electric field distribution in IGBT modules

分析了IGBT(Insulated Gate Bipolar Transistor)高压功率模块的内部电场绝缘问题。模块封装中使用的硅胶的电场承受能力直接影响了整个模块的绝缘表现,通过使用有限元分析方法,分析和确定了模块中最大电场存在的位置。结果表明,影响局部放电最关键的部分就是被硅胶覆盖的覆铜陶瓷基板,高的局部放电效应会使得硅胶绝缘失效,最终导致IGBT模块失效;最后提出了优化解决方案。

The inner electric field insulation problem of IGBT high voltage power module was analyzed. The electric field bearing capabilities of the silica gels used in the power module encapsulation directly affect the module insulation. The locations of max electric field were analyzed and ensured. Results show that the key part to affect local discharge is direct bonding copper plate covered by silicone gel. High partial discharge effect can make silicone gel insulation failure and result in IGBT modules failure. Finally, the optimal solution was proposed.