FPGA配置片反熔丝PROMs加速器地面单粒子效应特性研究

Investigation Single Event Effects Characterization on Configuration PROMs of FPGA Induced by Heavy Ions

针对0.13μm CMOS(Complementary Metal-Oxide-Semiconductor)体硅外延工艺下FPGA(Field Programmable Gate Arrays)配置片反熔丝PROM(Programmable-Read-Only-Memory)进行了单粒子效应(Single Event Effects SEEs)的加速器地面模拟试验研究。以PROM的存储容量、数据类型和工艺差异性为研究变量,考核与验证其在不同种类和能量粒子入射的系列性加速器地面SEEs模拟试验。研究结果表明,相对于8 Mbits PROM而言,空片16 Mbits PROM抗辐射性能最优,且从翻转饱和截面上说,16 Mbits的PROM具备更高的可靠性,优于国外同系列的芯片类型,试验用PROM芯片的单粒子锁定阈值99.0 Me V·cm2/mg。另一方面,研究0.13μm CMOS普通与深阱工艺技术下PROM芯片单粒子翻转效应异同性的实验数据表明,在高LET(Linear Energy Transfer)处的两者抗辐射性能并无明显变化,但是低LET处(LET翻转阈值)的加固效果较为明显,即抗辐射技术能力主要体现在LET翻转阈值的提升而非翻转截面的减小。

Single event effects（SEEs） have been characterized and investigated on one-time configured devices for field-programmable-gate-arrays（FPGA） of programmable-read-only-memory（PROM） in 0.13 μm Complementary Metal-Oxide-Semiconductor（CMOS） technology. The variables of their memory size, written data and technology have been taken into consideration as the key parameters affecting the SEEs sensitivity when testing and verifying the reliability/radiation tolerance on self-made PROMs by heavy ions. The results show that, 16 Mbits PROM within blanked data has been studied that it has better performance to radiation tolerance as compared with the 8 Mbits PROMs. Additionally, 16 Mbits PROMs have the higher reliability, if based on the viewpoint of the saturated single event upset cross-section. To the single event latchup, 16 Mbits PROMs were exposed to a total fluence of 10^7 ions/cm^2 at the linear energy transfer（LET） of 99.0 Me V·cm2/mg and no obvious fluctuation of current has been observed. Additionally,as comparing the zone of high LET value,0.13 μm CMOS transistors with deep-well technology present a better radiation hardened approach than normal technology, especially in improving the threshold of LET at the zone of low LET value.