一维Si_3N_4合成的研究进展

Research Progress in Synthesis of One-dimensional Silicon Nitride

纤维、晶须、纳米线等一维Si_3N_4材料及纳米带、纳米管、纳米环、纳米电缆等准一维Si_3N_4材料是具有优异的力学和热学性质的宽禁带半导体,在复合材料、催化、微纳器件和机电系统等方面有重要的应用价值。按形貌特征对一维Si_3N_4进行分类,概括了直接氮化法、碳热还原法、化学气相沉积法和先驱体热解法等合成方法,阐述了气-液-固、气-固、固-液-固等生长机制,详述并总结了一维Si_3N_4的研究现状,进而对其存在的问题和研究方向进行了分析和展望。

One-dimensional Si3 N4 materials （fibers,whiskers and nanowires）as well as quasi one-dimensional Si3 N4 materials （nanobelts,nanotubes,nanorings and nanocables）are semiconductors with wide band gap which pos-sess superior mechanical and thermal properties.Therefore,they have important applications in the fields of composite materials,catalysis,micro-nano devices and electromechanical systems.In this review,one-dimensional Si3 N4 mate-rials are classified and discussed respectively according to their morphologies.The synthesis methods,including direct nitridation,carbothermal reduction and nitridation,chemical vapor deposition and pyrolytic synthesis are summarized. The relevant growth mechanisms such as gas-liquid-solid,gas-solid and solid-liquid-solid are demonstrated.The current proceeding of one-dimensional Si3 N4 is described in details,and the problems and the further steps are illuminated.