硅离子注入硅辐照效应的计算机模拟研究

Computer Simulation of the Radiation Effects During Silicon Ion Implantation into Silicon

利用SRIM软件计算模拟不同能量的硅离子注入硅靶的作用过程、能量损失、硅靶损伤情况。结果表明,随入射硅离子能量的增加,其运动方向偏离入射方向的程度越来越大,且平均投影射程越来越大;硅靶的损伤区域越来越大,且级联损伤占总损伤的比例也越来越大;电离能损、声子能损不断增大,且电离能损随能量的变化近似为一直线;电离能损占总能损的比例不断增加,声子能损占总能损的比例不断减少;位错、空位和替位碰撞的数量都不断地增大。

By the process of SRIM,we simulated the whole process of the incident ions on target,loss of energy,silicon target damage.The results indicate that the degree of deviation from the direction of silicon ion movement is increasing and average projection range is increasing with increasing the ion energy incident on the silicon,silicon target damage area is bigger and cascade damage ratio is larger,ionization energy loss and phonon energy-loss is increasing and ionization energy loss with the energy of change is approximately a straight line,ionization energy loss ratio is increasing and phonon energy-loss ratio constantly reduces.The total displacement,vacancies and replacement collisions are constantly to increase.