基于全球专利的硅衬底镓氮器件发展趋势研究

Global-patent-based Trend Analysis of the Development of GaN-on-Si Sevices

基于德温特DII专利数据库，利用Thomson Data Analyzer等工具从全球专利发展态势、技术发展趋势、专利权人专利布局、功能和应用领域分布等方面进行了分析总结。结果显示，硅衬底镓氮器件从2011年以来快速发展，日本在硅衬底镓氮器件的研究方面具有较大竞争优势，我国还是停留在研究阶段，相关的专利技术缺乏核心竞争力。目前研究热点集中在二极管和晶体管，微波器件、放大器、射频器件等是目前的研发空白点，相关技术有待突破。

Based on Derwent Innovations Index （DII） patent database, the development trend of GaN-on-Si de- vices is analyzed by using the tools such as Thomson Data Analyzer, covering the aspects of global patent development trend, technology development trend, patent layout of patentee, field distribution in terms of functionality and applica- tion, and so on. The comprehensive analysis reveals that the GaN-on-Si devices have gained a rapid development since 2011, and Japan shows competitive advantages in the device applications while the work in China is mainly on re- search, relevant patents lacking technological competitiveness. Present research hotspots are still focused on LEDs and varieties of transistors, and there are lots of research gaps in microwave, amplification, and rf devices, requiring tech- nological breakthroughs.