摘要
基于碱性氧化铈抛光液体系,研究了磷酸氢二纳和氟化钾两种缓蚀剂对镁合金缓蚀影响的基本规律。采用扫描电镜、X射线光电子能谱和电化学实验分析了化学机械抛光中镁合金表面微观形貌和缓蚀机理。发现:1%(质量分数)磷酸氢二纳电荷转移电阻最大为7481Ω·cm-2,电流密度最小为0.01441mA/cm^2,具有最佳缓蚀能力。Na_2HPO_4在镁合金表面生成完整的钝化膜,具有很好的缓蚀能力。其缓蚀机理是:Na_2HPO_4在镁合金表面生成MgHPO_4,可以阻挡腐蚀介质向镁合金表面靠近,有效抑制了镁合金基片的腐蚀。
Na2HPO4and KF were selected as corrosion inhibitors to investigate the effect of corrosion inhibitors on the Mg alloy in alkaline polishing slurry.Through electrochemical tests,it was found that 1wt% Na2HPO4 have the highest corrosion resistance due to the highest transfer resistance（7481 Ω·cm-2）and lowest current density（0.01441mA/cm2）.SEM and XPS were conducted to study the skin covering of the magnesium alloy surface with the introduction of corrosion inhibitor.It is shown that Na2HPO4 has outstanding corrosion resistance,which can be governed by the generation of MgHPO4.
关键词
化学机械抛光
缓蚀剂
电化学
chemical mechanical polishing
corrosion inhibitor
electrochemical
