非配比InP材料研究进展

Research Progress of the Non-Stoichiometry InP

InP的配比度对晶体质量及相关器件性能有重要影响。若In-P熔体为富铟状态,不仅不容易生长单晶,而且易出现铟夹杂物;若熔体为富磷状态,则晶体中深能级缺陷将大幅增加,磷富余量过多时容易在晶体尾部产生孔洞,在孔洞周围位错密度明显增加。综述了与配比相关的InP材料的研究工作,着重分析了InP相图、不同配比InP材料制备、配比度的测量、与非配比相关的缺陷等方面的研究。重点探讨了非配比InP材料的制备、与配比相关缺陷的产生及缺陷对晶体质量的影响,对非配比InP的研究方向进行了分析和预测,提出了亟待研究解决的问题。

The deviation from stoichiometry of InP has great influences on the quality of single crystals and device performance. If the In-P melt is indium rich,it will be difficult to grow single crystal,and easy to cause indium inclusions; if the InP melt is riched in phosphorus,it will cause the deep level defects increased drastically. And if the phosphorus is to much in the melt,there will be many pores in the tail of the ingot. The etch pit density（ EPD） around the pores is higher than those of other regions.The researches related to the stoichiometry of InP are summarized and four aspects of this work are analyzed,including the synthesis and growth of non-stoichiometry materials,the phase diagram of InP,the evaluation of stoichiometric composition of InP and the defects of non-stoichiometry materials. The preparation of non-stoichiometry InP,and its related defects and the influence of defects on the crystal quality are discussed,the research direction of non-stoichiometry InP is analyzed and forecasted,and the research problems which need to be solved are put forward.