摘要
采用一种管式扩散炉工艺制备了平均效率为20%的n型双面晶硅太阳电池。制得的n型双面晶硅电池峰值正面效率为20.30%、背面效率为17.59%。硼、磷扩散工艺分别在硼、磷高温管式扩散炉中实现,POCl_3气氛的高温扩散工艺沉积PSG/SiO_x层,BBr3气氛的高温扩散工艺沉积BSG/SiO_x层。电化学电容-电压法测试显示正面硼发射极没有受到POCl_3高温扩散的影响。采用电致发光测试方法研究了该n型双面电池的边缘漏电情况。该n型双面电池工艺制作流程采用常规的产线设备,适合大规模生产。
A furnace-diffused n-type bifacial silicon solar cells with the average efficiency of 20%was presented. The n-type bifacial solar cells have peak efficiencies of 20. 30% on the front sides and17. 59% on the back sides. The diffusion processes of B and P was based on a high temperature step in an atmosphere,containing POCl_3 and BBr3. A PSG / Si Oxlayer stack was deposited in the diffusion furnace containing POCl_3 atmosphere,and a BSG / SiO_x layer stack was deposited in the diffusion furnace containing BBr3 atmosphere. The electrochemical capacitance voltage measurement shows the boron emitter is not affected by the POCl_3high-temperature diffusion process. The edge current leakage of the ntype bifacial solar cells was studied by electroluminescence test. The current production equipments are adopted in the n-type bifacial cells process,which are suitable for large scale industrial production.
作者
吕晓华
严金梅
李吉
张进臣
赵朋松
LU Xiaohua Yan Jinmei Li Ji Zhang Jinchen Zhao Pengsong(JA Solar Co., Ltd., Xingtai 055550, Chin)
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第12期924-928,共5页
Semiconductor Technology
关键词
n型双面电池
硼和磷管式扩散
高效率
阻挡层
漏电
n-type bifacial solar cell
B and P furnaces diffusion
high efficiency
barrier layer
electric leakage