摘要
采用磁控溅射法在衬底Pt(111)/Ti/SiO_2/Si(100)上制备BiFeO_3(BFO)薄膜,退火温度为500℃、550℃、600℃和630℃.利用X射线衍射仪(XRD)、原子力显微镜(AFM)、紫外-可见(UV-Vis)吸收及光伏性能等测试手段对BFO薄膜进行表征.XRD测试表明,除退火温度为500℃的BFO薄膜出现富铁相(Bi_2Fe_4O_9)外,其余退火温度下的BFO薄膜呈单一的钙钛矿相,空间群为R3c.AFM结果显示,随着退火温度的升高,BFO薄膜表面越平整.同时研究得出,退火温度为550℃下BFO薄膜的光学带隙为2.57eV,不同退火温度下的BFO薄膜器件的光伏性能较差.
RF magnetron sputtering was adopted to deposit BiFeO3 （BFO） thin films on Pt（111）/Ti/ SiO2/Si（100） substrates annealed at 500 ℃、550 ℃、600℃ and 630 ℃, respectively. BFO thin films were characterized by X - ray diffraction （XRD）, atom force microscope （AFM）, ultraviolet - visible （UV-Vis） absorption and photovoltaic property. XRD patterns of the films indicate that all the films are indexed for a perovskite rhombohedral structure of BFO with space group R3c, except BFO thin film annealed at 500 ℃ with an impurity phase of Bi2 Fe4O9 （Fe -rich phase）. AFM observations demonstrate that the surface of BFO films is more smooth with the increase of annealing temperature. The band gap is 2.57 eV for the film annealed at 550 ℃. BFO thin films show weak photovoltaic properties.
作者
崔晓明
徐燕飞
周挺
丁伟
李小怡
CUI Xiaoming XU Yanfei ZHOU Ting DING Wei LI Xiaoyi(School of Science, Huzhou University, Huzhou 313000, China)
出处
《湖州师范学院学报》
2016年第10期14-17,28,共5页
Journal of Huzhou University
基金
湖州师范学院求真学院"大学生创新创业训练计划"(2015-42)
关键词
磁控溅射
BIFEO3
不同退火温度
光伏性能
magnetron sputtering
BiFeO3
different annealing temperature
photovoltaic property
