基于GaN基HEMT结构的传感器件研究进展

Progress of Sensor Elements Based on GaN-based HEMT Structure

GaN基高电子迁移率晶体管(HEMT)具有异质结界面处的高二维电子气(2DEG)浓度、宽禁带、高击穿电压、稳定的化学性质以及高的电子迁移率,这些特性使它发展起来的传感器件在灵敏度、响应速度、探测面、适应恶劣环境上具备了显著的优点。本文首先围绕GaN基HEMT的基本结构发展起来的两类研究成熟的传感器,对其结构、工作机理、工作进展以及优缺点进行了探讨与总结;而后,着重从改变器件材料及优化栅结构与栅上材料的角度,阐述了3种GaN基HEMT新型传感器的最新进展,其中,从材料体系、关键工艺、探测结构、原理及新机理方面重点介绍了GaN基HEMT光探测器;最后,探索了GaN基HEMT传感器件未来的发展方向。

The sensor elements based on GaN high electron mobility transistor（ HEMT） have considerable advantages on sensitivity,response speed,detection surface,and harsh environment adaptability because of the features of HEMT,such as high 2DEG density at the hetero-interface,wide band gap,high breakdown voltage,stable chemical properties,and high electron mobility. In this paper,the structures,mechanism,progress of work,advantages and disadvantages about the two mature types of sensors developed from GaN-based HEMT basic structure are discussed and summarized firstly. Then,the latest progress on three kinds of nevel GaN-based HEMT sensors is reviewed in detail focusing on the device material and the optimization of gate structure and material.Among them,GaN-based HEMT photodetector is highlighted in the aspects of the material system,key process,detector structure,principle and new mechanisms. Finally,the future direction for the development of GaN-based HEMT sensor elements is explored.