Ⅲ-Ⅴ族半导体纳米晶体表面对氮分子的吸附作用

Study on the Adsorption Property to N_2 on the Surface of Ⅲ-Ⅴ Semiconductor Nanocrystals

研究了Ⅲ Ⅴ族半导体纳米晶表面氧化状态对它们表面活性的影响 ,并比较了具有不同阳离子的纳米晶体对氮分子吸附能力的差异 ,对这些现象进行了解释 ;用XPS、红外光谱等测试手段对样品进行了性质表征。结果表明 :当Ⅲ Ⅴ族半导体纳米晶表面氧化严重时 ,其表面活性明显降低 ;含Ga的Ⅲ Ⅴ族半导体纳米晶对氮分子的吸附作用明显强于含In的纳米晶。这是因为Ga能够与氮分子形成较强的配位键 。

The effect of surface oxidation on the adsorption property of Ⅲ Ⅴ semiconductor nanocrystals was investigated,and the difference in the N 2 adsorption ability of nanocrystals with different kinds of cations was also analyzed.The nanocrystals before and after adsorbing N 2 were characterized by XRD,XPS,IR and TG measurements.The results showed that the surface adsorption ability of GaP nanocrystal is much higher than that of InP nanocrystal,because there is rather strong coordinate bond formed between Ga and N.Furthermore,the surface adsorption ability of GaP to N 2 decreased greatly when surface oxidation took place.