利用Γ-X混合在Al As/Ga As异质结构实现光生电子、空穴对的持久存储

Long-lived Charge-palarization Created by Resonant Г-X Coupling in a Heterostructure Composed by a AlAs Layer and a GaAs Quantum Well

利用GaAs量子阱中Γ谷束缚态与AlAs层中Χ谷束缚态在异质结界面处的共振Γ X混合 ,使得光生电子不仅在实空间而且在K空间与光生空穴分离开来 ,从而在结构中形成了持久的电荷极化。这一效应已被C V特性上所观察到的电容阶跃和正反方向扫描时所出现的双稳滞迟现象所证实。如果将我们的器件用作光存储单元 ,预期可以获得很长的存储时间Ts。同时 ,由于Γ X混合隧穿速率很快 ,光子“读出”

Peculiar capacitance jump and hysteresis in C V curves have been reported in a memory cell constructed by a thick AlAs layer and a narrow GaAs quantum well (QW).It has been proved that these novel features come from the occurance of electron transfer in both real space and K space due to directly resonant Г X coupling when the structure is biased properly.Our structure may plausibly operate as a photonic memory cell with much prolonged storage time and fast retrieval as well.