双靶磁控溅射透明导电氧化铟锡锆薄膜及其性能

Transparent and conductive zirconium-doped iridium tin oxide film prepared by dual magnetron sputtering and its properties

利用ITO(InSnO)靶和金属Zr靶,采用磁控溅射法在玻璃衬底上制备了ITO和ITZO(InSnZrO)薄膜。高价金属元素Zr的掺杂导致了薄膜向(400)晶面择优取向转变,促使ITO薄膜具有更好的晶化程度、较低的表面粗糙度和更好的光电性能。根据处于特定介质环境中ITO和ITZO薄膜的相对电阻变化(△R/R),ITZO薄膜显示了比ITO薄膜更好的化学和热稳定性。通过盐酸腐蚀前后的扫描电镜和X射线光电子能谱仪测试表明,Zr的加入提高了薄膜的稳定性,降低了氯离子穿透氧化层的能力,提高了氧化层的结构稳定性,大大降低了薄膜发生点蚀的概率。薄膜在0.1 mol/L盐酸中的极化曲线表明,ITZO薄膜发生了自钝化现象,显示了较好的耐腐蚀性能。除了晶体结构的影响之外,稳定性较好的氧化锆也提高了薄膜的化学稳定性和热稳定性。

ITO （lnSnO） and ITZO （InSnZrO） films were deposited on glass substrate by magnetron sputtering technique with ITO target and metal Zr target. The doping of high-valence metal element Zr leads to the formation of （400） plane preferred orientation, which favors a better crystallinity, lower surface roughness and better electrical and optical properties for ITO films. According to the relative resistance change （AR/R） oflTO and ITZO films in a certain medium environment, ITZO film shows better chemical and thermal stability than ITO film. The results of scanning electron microscopy and X-ray photoelectron spectroscopy before and after hydrochloric acid corrosion showed that the addition of Zr improves the stability of both films and lowers the ability of C1- to penetrate the oxide layer, leading to the improvement of its structure stability and reducing the chance of pitting corrosion greatly. According to the polarization measurements in 0.1 mol/L hydrochloric acid, the ITZO film shows self-passivation and better corrosion resistance than the ITO film. Besides the crystal structure of ITO film is affected by the dosing of zirconium, its chemical and thermal stability was improved by the formation of highly stabile zirconia.