期刊文献+

准分子激光与SiC陶瓷的相互作用研究 被引量:4

Interaction Between Excimer Laser and SiC Ceramic
原文传递
导出
摘要 采用准分子激光对SiC陶瓷表面进行了不同脉冲数、不同单脉冲能量和不同重复频率的辐照实验,获得了SiC陶瓷的辐照损伤二维和三维表面形貌,并分析了微观作用机制。结果表明,193nm准分子激光辐照SiC陶瓷时既产生光热作用又产生光化学作用,其中光热作用占主导;SiC表面损伤的宏观形貌与激光辐照参数相关,辐照脉冲数增加或单脉冲能量增加均会加重辐照损伤,增大激光重复频率会导致辐照损伤深度略微下降。 Irradiation experiments are conducted on the number, single-pulse energy, and repetition frequency SiC ceramic using excimer lasers with different pulse The two-dimensional and three-dimensional damage morphologies of irradiation-damaged SiC ceramic are acquired, and the microscopic damage mechanism is analyzed. The results indicate that, with 193 nm excimer laser irradiating on SiC ceramic, both the photo-thermal and photo- chemical effects are involved and the photo-thermal effect is dominant. The macroscopic damage morphology is closely related to laser irradiation parameters and the increment of either the irradiation pulse number or single-pulse energy aggravates the irradiation damage. Increasing the laser repetition frequency results in a little reduction of scratch depth.
出处 《激光与光电子学进展》 CSCD 北大核心 2016年第12期159-164,共6页 Laser & Optoelectronics Progress
基金 国家科技重大专项(2012ZX02702001)
关键词 激光技术 辐照损伤 损伤机制 准分子激光 SIC陶瓷 laser technique irradiation damage damage mechanism excimer laser SiC ceramic
  • 相关文献

参考文献6

二级参考文献51

  • 1邓琦林,张永康,唐亚新,余承业.材料加工中的准分子激光器[J].航空制造工程,1994(10):6-8. 被引量:3
  • 2ASMONTAS S, GRADAUSKAS J, SELIUTA D, et al. CO2 laser Induced Hot Carrierphotoeffect in HgCdTe [ J]. Materials Science Forum, 2002, 384-385 : 147-150.
  • 3AMIT GARG, AVINASHI KAPOOR, TRIPATHI K N, et al. Laser Induced Damage Studies in Mercury Cadmium Telluride [ J]. Optics & Laser Technology, 2007, 39: 1319-1327.
  • 4LIU Ji, LI Xiang-yang, HU Xie-rong, et al. Impulse Coupling Between Laser and HgCdTe [ J ]. Proc SPIE-The International Society for Optical Engineering, 1994, 2274: 68-75.
  • 5GOLOVAN L A, MARKOV B A, KASHKAROV P K, et al. Evaporation Effect on Laser Induced Solid-liquid Phase Transition in CdTe and HgCdTe [ J]. Solid State Communications, 1998, 108 (10) : 707-712.
  • 6BARTOLI F, ESTEROWITZ L, KRUER M, et al. Thermal Modeling of Laser Damage in 8- 14 μm HgCdTe Photoconductive and PbSnTe Photovoltaic Detectors [ J]. J Appl Phys, 1975, 46(10) : 4519- 4525.
  • 7BARTOLI F, ESTEROWITZ L, ALLEN R, et al. A generalized Thermal Model for Laser Damage in Infrared Detectors [J]. JApplPhys, 1976, 47(7): 2875-2881.
  • 8B1RNBAUM M. Semiconductor Surface Damage Produced by Ruby Laser [ J]. J Appl Phys, 1965, 36: 3688.
  • 9YOUNG J F, SIPE J E, PRESTON J S, et al. Laser Induced Periodic Surface Damage and Radiation Remnants [ J]. Appl Phys Lett, 1982, 41 : 261.
  • 10CHEN C S, LIU A H, SUN G, et al. Analysis of Laser Damage Threshold and Morphological Changes at the Surface of a HgCdTe Crystal [J]. J Opt A: Pure Appl Opt, 2006, 8:88 - 92.

共引文献31

同被引文献47

引证文献4

二级引证文献12

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部