ZnO掺杂对PNN-PZT陶瓷结构及压电性能的影响

Effect of ZnO Doping on Structure and Electrical Properties of PNN-PZT Ceramics

通过传统的固相烧结法制备了Pb(Ni_(1/3)Nb_(2/3))_(0.5)(ZraTib)_(0.5)O_3+x%ZnO(PNN-PZT+x%ZnO,质量分数x=0.2,0.4,0.6,0.8)压电陶瓷,该文研究了不同ZnO含量对PNN-PZT压电陶瓷的微观形貌、相结构及压电性能的影响。通过X线(XRD)表明,过量的ZnO加入使压电陶瓷出现焦绿石相;通过扫描电镜(SEM)分析表明,当x>0.4时,ZnO的加入由于烧结温度的降低,晶界不明显。实验表明,烧结温度为1 190℃保温2h,ZnO的掺杂量x=0.4时,压电材料的综合性能最好:介电常数εr=5 596,介电损耗tanδ=2.12%,压电常数d33=534pC/N,机械耦合系数kp=0.53。

Pb（Ni1/3Nb2/3）0.5（ZraTib）0.5O3＋x%ZnO（PNN-PZT＋x%ZnO,x = 0. 2,0. 4,0. 6,0. 8） piezoelectric ceramics were prepared by the conventional solid-state reaction method. The effects of different ZnO contents on the mierostructure, phase structure, dielectric and piezoelectric properties. The XRD analysis indicated that the pyroehlore phase occurred with increasing of ZnO content. The SEM analysis indicated that the grain boundary is unclearly in high ZnO content. The dielectric properties indicated that the optimum properties of this system ceramic were obtained with x=0.4 at the sintering temperature of 1 190℃ for 2 h. The main parameters of the ceramic are as follows： εr=5 596, tan 3：2.12%,d33-534 pC/N, kp-0.53.