摘要
SiC whiskers were synthesized in a coke bed using a two-step heat treatment process.The temperature was held for 3 h at 1 200 ℃ before heating to 1 430 ℃ and holding for 3 h.The morphologies of SiC synthesized by the two-step heat treatment method were much more different from those produced by direct heating to 1 430 ℃.SiC whiskers formed at 1 200 ℃ firstly and grew at1 430 ℃ to obtain a mean diameter about 326 nm,while the SiC grains with a size range from 0.70 to2.30 μm were obtained by direct heating to the target temperature of 1 430 ℃.This was explained by the different formation mechanisms.The result proposes a promising alternative technical process for whisker-reinforced ceramic/refractory composites in-situ during sintering.
SiC whiskers were synthesized in a coke bed using a two-step heat treatment process.The temperature was held for 3 h at 1 200 ℃ before heating to 1 430 ℃ and holding for 3 h.The morphologies of SiC synthesized by the two-step heat treatment method were much more different from those produced by direct heating to 1 430 ℃.SiC whiskers formed at 1 200 ℃ firstly and grew at1 430 ℃ to obtain a mean diameter about 326 nm,while the SiC grains with a size range from 0.70 to2.30 μm were obtained by direct heating to the target temperature of 1 430 ℃.This was explained by the different formation mechanisms.The result proposes a promising alternative technical process for whisker-reinforced ceramic/refractory composites in-situ during sintering.
基金
supported by the 973 Program Earlier Research Project,under Grant No.2014CB660802
