摘要
采用Stille交叉偶联反应,合成了基于6-烷基吡咯[3,4-d]哒嗪-5,7-二酮(PPD)与吡咯并吡咯二酮(DPP)结构单元的受体-π-受体(A_1-π-A_2)型共轭聚合物(PPPD-DPP)。采用热重分析仪、紫外分光光度计、电化学工作站等表征了聚合物PPPD-DPP的性能,系统地研究了聚合物的热性能、光物理性能、电化学性能及晶体管性能。结果表明:聚合物PPPD-DPP具有良好的热稳定性,热分解温度达到376℃;薄膜的最大吸收峰位于702nm,光学能带隙为1.27eV;有较低的最高占据分子轨道能级(HOMO,-5.23eV)。基于PPPD-DPP的有机薄膜晶体管(OTFTs)器件在真空中显示出双极性传输特性,最高电子和空穴迁移率分别为0.030 cm^2/(V·s)和0.054cm^2/(V·s),在空气中PPPD-DPP器件则表现出明显的p型传输特性,空穴迁移率提升至0.121cm^2/(V·s)。
An acceptor-Tracceptor ( Ai -tc -A2 ) conjugated polymer (PPPD-DPP) based on 6-alkylpyrroles [3,4-d]pyridazine-5,7-dione(PPD) and diketopyrrolopyrrole(DPP) units was synthesized by Stille cross-coupling reaction. The thermal, optical, electrochemical and transistor properties of the polymer were studied by thermo gravimetric analyzer, UV-Vis-NIR absorption spectrophotometer and cyclic voltammetry. The polymer PPPD-DPP showed excellent thermally stable with a decomposition temperature of 376 ℃ and broad absorption in the near infrared region. PPPD-DPP also had low band gap of 1. 27 eV and deep highest molecular orbital energy level (HOMO) of -5. 23 eV. Polymer-based organic thin film transistors (OTFTs) devices exhibited ambipolar charge transport under vacuum and yielded the mobilities of 0. 030,0. 054 cm2/ (V · s) for electron and hole, respectively. The devices were also investigated in air and diaplayed type transport behavior with a hole mobility of 0. 121 cm2/ (V · s).
作者
刘家庆
牛永鹏
邱龙瑧
张国兵
LIU Jia-qing NIU Yong-peng QIU Long-zhen ZHANG Guo-bing(Key Laboratory of Special Display Technology of the Ministry of Education,National Engineering Laboratory of Special Display Technology,National Key Laboratory of Advanced Display Technology, Hefei University of Technology, Hefei 230009 , China Academy of Photoelectric Technology,Hefei University of Technology, Hefei 230009 , China Avic Huadong Photoelectric Co .Ltd.,Wuhu 241000,Anhui,China)
出处
《功能高分子学报》
CAS
CSCD
北大核心
2016年第4期411-417,共7页
Journal of Functional Polymers
基金
国家自然科学基金青年基金(21204017)
关键词
哒嗪并吡咯二酮
共轭聚合物
有机薄膜晶体管
pyrrolo-pyridazine-dione
conjugated polymer
organic thin film transistor