氧化镍基电阻存储薄膜的电学性能研究

The Study of Electrical Property of Ni OxResistive Memory Thin Films

以醋酸镍为原料,乙二醇甲醚为溶剂,苯酰丙酮为化学修饰剂,采用溶胶-凝胶法与化学修饰法相结合的方法制备感光性氧化镍基溶胶及凝胶膜,凝胶膜进行热处理后,进行电学性能测试,结果表明在不同热处理温度下的薄膜都具有明显的电阻开关特性,且随着热处理温度的升高,薄膜的复位电压有变化,但对开关比没有明显的影响,其开关比(Roff/Ron)的数量级都为103。当热处理温度为300℃时,Ni Ox薄膜的电阻开关性能最优。

We used nickelous acetate （Ni（CH3COO）2＆#183;4H2O） and ethylene glycol monomethyl ether （CH3 OCH2 CH2 OH） as starting materials while benzytone （ BzAcH） as a chemical modifier,thus photosensitive gel films were prepared by the dip-coating technique with chemical modification. After heat treatment,electrical property of thin films with different heat treatment temperature were measured,measurement results indicated the films with dif-ferent heat treatment temperature exhibited resistive switching characteristic. With the increase of the film heat treatment temperature,reset voltage of films varied,but the high-resistance to low-resistance ratio was hardly affected and order of magnitude of Ron/Rof can all reach 103. When the heat treatment temperature was 300℃,thin film ex-hibited optimal resistive switching performance.