热氧化SiO_2工艺在硅太阳电池中的应用及研究

Thermal oxidation technology research and application in crystalline silicon solar cells

采用热氧化法在晶体硅基底上生长SiO2薄膜,研究了不同厚度的SiO2氧化层对少子寿命（MCL）、光学吸收及与SiNx体钝化的影响;同时通过理论计算匹配相应的SiO2/Si Nx叠层膜,得出SiO2层厚度大约为10 nm,Si Nx膜的理论厚度在60~70 nm之间,折射率在2.1~2.2之间。研究发现SiO2/Si Nx叠层膜工艺比常规Si Nx工艺太阳电池的能量转换效率（Eta）提升了0.12%,开路电压（Uoc）提高了2 mV,短路电流（Isc）提高了40 m A。

The main research was thermal oxidation in crystalline silicon substrate. The effect of oxidation time on MCL, optical absorption and the difference of SiNx passivation was researched. SiO2 film was about 10 nm, SiNx film theory thickness was between 60-70nm, the refractive was between 2.1 and 2.2 by theoretic calculation. It was demonstrated that the SiOJSiNx complex film was better than general SiNx film. Compared to the general SiN, solar cells, the conversion efficiency of the optimized SiO2/SiN, solar cells increased 0.12%, Isc increased 0.04 A and the U∝ increased 2 mV.