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Epitaxial growth and thermal-conductivity limit of singlecrystalline Bi2Se3/In2Se3 superlattices on mica 被引量:1

Epitaxial growth and thermal-conductivity limit of singlecrystalline Bi2Se3/In2Se3 superlattices on mica
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摘要 在超点阵的热运输被各种各样的散布声子的过程管理。为在 chalcogenide 超点阵提取异种接口的散布声子的贡献,单人赛水晶的双性人 <sub>2</sub > Se <sub>3</sub>/In<sub>2</sub > 有最小化的缺点的 Se <sub>3</sub>(BS/IS ) 超点阵被分子的横梁取向附生在 fluorophlogopite 云母上准备。BS/IS 超点阵的跨飞机的进行热的性质被表明精确取决于时期厚度和超点阵的成分,在在热传导性的最小显示一条转线路从的地方对在超点阵的像波浪的声子运输像粒子。BS/IS 超点阵的热传导性的最小比内在的 BS 电影的低将近一个数量级。 Thermal transport in superlattices is governed by various phonon-scattering processes. For extracting the phonon-scattering contribution of hetero-interfaces in chalcogenide superlattices, single-crystalline Bi2Se3/In2Se3 (BS/IS) superlattices with minimized defects are prepared on fluorophlogopite mica by molecular beam epitaxy. The cross-plane heat-conducting properties of the BS/IS superlattices are demonstrated to depend precisely on the period thicknesses and constituents of the superlattices, where a minimum in the thermal conductivity indicates a crossover from particle-like to wave-like phonon transport in the superlattices. The thermal-conductivity minimum of the BS/IS superlattices is nearly one order of magnitude lower than that of intrinsic BS film.
出处 《Nano Research》 SCIE EI CAS CSCD 2017年第1期247-254,共8页 纳米研究(英文版)
基金 Acknowledgements This work is supported by the National Natural Science Foundation of China (Nos. 11104010, 61474014, and 51272038), Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (No. 20120910), and the National Basic Research Program of China (No. 2013CB933301).
关键词 分子的横梁取向附生 双性人 <sub>2</sub > Se <sub>3</sub> <sub>2</sub > Se <sub>3</sub> 超点阵 热电导率 molecular beam epitaxy,Bi2Se3,In2Se3,superlattice,thermal conductivity
分类号 O [理学]
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