摘要
瞬时剂量率辐射会对集成电路产生不同程度的影响,产生扰动、翻转、闩锁甚至烧毁等问题。针对一款具有两种电源电压的0.18μm SRAM电路,利用"强光一号"装置进行了瞬时γ剂量率辐射试验,研究了SRAM电路的内核电压和IO电压受扰动后的恢复时间,并对试验结果进行了分析。高电源电压扰动恢复时间优于低电源电压扰动恢复时间,该发现对多电压集成电路瞬时剂量率效应的评估和加固具有指导意义。
Transient dose rate radiation causes various degrees of impact on integrated circuits, disturbance, upset, latch-up and burnout are generated. Transientγ dose rate irradiation experiment of a two kinds of power supply voltage SRAM circuits based on ＂Qiangguang-I＂ accelerator is studied. The recovery time of core voltage and the recovery time of IO voltage are researched; the recovery time of IO voltage is superior to core voltage. The experiment results are analyzed. The finding has certain guidance signif- icance for the assessment and hardening of transient dose rate effect on multiple voltage integrated circuits.
作者
李同德
赵元富
王亮
郑宏超
舒磊
刘家齐
于春青
Li Tongde Zhao Yuanfu Wang Liang Zheng Hongchao Shu Lei Liu Jiaqi Yu Chunqing(Beijing Mieroeleetronies Technology Institute, Beijing 100076, China Harbin Institute of Technology, Harbin 150001 , China)
出处
《电子技术应用》
北大核心
2017年第1期6-9,共4页
Application of Electronic Technique
关键词
瞬时剂量率
多电压
γ脉冲
扰动
transient dose rate
multiple voltage
γpulse
disturb
