金刚石线锯电解磨削切割多晶硅片的试验研究

Experimental Study on Electrochemical Grinding Machining of Polycrystalline Silicon Wafer with Diamond Wire Saw

基于金刚石线锯切割系统,开展了金刚线电解磨削切割多晶硅片试验。结果表明:电解磨削复合加工方法在机械磨削的同时复合了阳极氧化和腐蚀,在硅片表面产生了机械损伤缺陷和电化学腐蚀缺陷。酸制绒时腐蚀反应在两种类型缺陷处顺利进行,形成均匀致密的绒面结构,有效降低硅片表面反射率,有利于后续电池片光电转换效率的提高。

The polycrystalline silicon wafers were sliced by electrochemical grinding method based on the diamond wire saw system. The electrochemical grinding experimental results show that the etching happens at the defects that caused by grinding and electrochemical reaction during the process of texturing. And the uniform and dense microstructure was formed on the surface of polycrystalline silicon wafer by acid wet texturing. The microstructure can reduce the surface reflectivity effectively and is better for the improvement of photoelectric conversion efficiency for cells.