溅射时间对GZO薄膜光电性能的影响

Effects of Sputtering Time on Photoelectric Property of GZO Films

采用射频磁控溅射法在普通玻璃衬底上制备了Ga_2O_3含量为3wt.%的掺镓氧化锌透明导电薄膜(GZO)。通过X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、四探针测试仪、台阶仪、UV-Vis-NIR3600型紫外-可见分光光度计研究了溅射时间对薄膜结构、表面形貌及光电性能的影响。结果表明,溅射时间为40 min时制备的GZO薄膜的光电综合性能最好,可见光区透过率峰值86%,方阻为16.4Ω/□,电阻率为1.18×10-3Ω·cm,性能指数ΦTC为4.73×10^(-3)Ω-1;随着溅射时间增加,薄膜光学带系从3.69 e V减少到3.56 e V。在溅射时间60 min时结晶度最高,方块电阻为9.0Ω/□,电阻率最低为9.7×10-4Ω·cm,可见光透过率峰值为81%。

Transparent conductive ZnO： Ga （ GZO, Ga203 = 3wt. % ） films were deposited on common glass substrates by radio frequency （RF） magnetron sputtering. The effects of sputtering time on the structural, morphology, optical and electrical properties of the GZO films was investigated by using XRD, SEM, four point probes, step profiler and UV-Vis-NIR3600 Spectrophotometry. The obtained results show that, at the sputtering time for 40 min, the peak value of the transmittance of the GZO films in visible region is more than 86% , the sheet resistance is 16.4 Ω/□ and the resistivity is 1.18 × 10-3 Ω·cm, and the best photoelectric property with a value of merit of 4.73 × 10-3 Ω-1. With the increasing of the sputtering time, the optical band gap decreases from 3.69 eV to 3.56 eV. The best crystallinity of the GZO films was obtained at the sputtering time for 60 min, its sheet resistance and resistivity were 9. 0 Ω/□ and 9.7 × 10 -4Ω·cm respectively, and the peak value of the transmittance in the visible region is 81%.