摘要
在传统电流型带隙基准源的基础上,设计了一种高温段曲率补偿基准电压源。利用工作在亚阈值区的PMOS晶体管的漏电流与栅源电压的指数关系产生非线性补偿电流,对温度特性曲线的高温段进行补偿。采用0.18μm标准CMOS工艺对电路进行设计与仿真,结果显示输出基准电压为600mV,1kHz下的电源电压抑制比为-55.5dB,在-40℃~125℃温度范围内的温度系数为2.26×10^(-6)/℃。
A new bandgap reference with curvature compensation in high temperature zone was designed on the basis of the traditional current-mode bandgap reference structure.The temperature characteristic curve was compensated in high temperature zone by using the exponential relationship between drain current and gate-source voltage of a PMOS transistor working in the sub-threshold region.Simulation was conducted in a standard 0.18μm CMOS process.Simulation result showed that the output reference voltage was 600 mV.The PSRR was-55.5dB at 1kHz,and the temperature coefficient was 2.26×10^（-6）/℃ at the range of-40 ℃~125 ℃.
作者
顾宇晴
李婷
胡云斌
王小力
GU Yuqing LI Ting HU Yunbin WANG Xiaoli(School of Electronics and Information Engineering, Xi＇ an Jiaotong University, Xi＇ an 710049, P. R. China Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, P. R. China)
出处
《微电子学》
CAS
CSCD
北大核心
2016年第6期754-757,共4页
Microelectronics
基金
模拟集成电路重点实验室基金资助项目(9140C090111150C09041)
关键词
带隙基准
曲率补偿
亚阈值区
温度系数
Bandgap reference
Curvature compensation
Sub-threshold region
Temperature coefficient
