摘要
设计了一种工作在亚阈值区的高精度、低电压、低功耗CMOS基准电路。电路采用0.18μm CMOS工艺实现,在1.2V电源电压下,输出202mV的基准电压,在-40℃~130℃范围内的温度系数为6.5×10-5/℃,消耗2.46μA电流。电源电压从1.1V变化到3.6V时,输出基准电压仅变化0.336mV。该基准电路的电源电压抑制比（PSRR）在直流处达到-93dB,10MHz处达到-63dB。设计了一种多路快速启动电路,只需13μs即可完成启动。利用高阈值电压晶体管与普通阈值电压晶体管的Vth之差作为负温度系数电压源,使输出基准电压对工艺角不敏感。
A high-precision low-voltage low-power CMOS voltage reference operating at subthreshold region was presented.The circuit was fabricated in 0.18μm CMOS process.A reference voltage of 202 mV with a temperature coefficient of 6.5×10-5/℃ from-40 ℃ to 130 ℃ at 1.2 V power supply with total current of 2.46μA was achieved.The proposed voltage reference circuit could operate at supply voltages ranged from 1.1to 3.6Vand the output voltage change was only 0.336 mV.The achieved power supply rejection ratio（PSRR）were about-93 dB at DC and-63 dB at 10 MHz respectively.A novel multipath fast startup circuit was also designed to ensure the voltage reference to startup quickly in only 13μs.The output voltage variation due to process corner variation was minimized by using the difference of Vthbetween high threshold voltage and normal threshold voltage transistor as the negative temperature coefficient voltage source.
作者
杨峰
石春琦
张润曦
赖宗声
YANG Feng SHI Chunqi ZHANG Runxi LAI Zongsheng(Institute of Microelectronics Circuits ＆ System, East China Normal University, Shanghai 200062, P. R. Chin)
出处
《微电子学》
CAS
CSCD
北大核心
2016年第6期758-761,776,共5页
Microelectronics
基金
国家自然科学基金资助项目(61306034
61302005)
上海市科委资助项目(14DZ2260800)
关键词
基准电压
低电压
低功耗
高PSRR
工艺角
Voltage reference
Low voltage
Low power
High PSRR
Process corner
