一种用于全MOS电压基准源的新颖预抑制电路

A Novel Pre-Suppression Circuit for All-MOSFET Bandgap Voltage Reference Source

提出了一种用于全MOS电压基准源的新颖预抑制电路。采用一个大宽长比PMOS管和负反馈环路,将预抑制电压与基准电压之差固定为一个阈值电压。获得的预抑制电压用来为全MOS电压基准源供电,极大地改善了基准电压的电源调整率、温度稳定性和电源电压抑制比。采用Nuvoton 0.35μm 5V标准CMOS工艺进行仿真,整个电路的版图尺寸为64μm×136μm。结果表明:电压基准源的输出基准电压为1.53V;电源电压在3.4~5.5V范围内,线性调整率为97.8μV/V;PSRR在10 Hz处为-143.2dB,在100 Hz处为-123.3dB,在1kHz处为103.3dB;环境温度在-45℃~125℃范围内,平均温度系数为8.7×10^(-6)/℃。

A novel pre-suppression circuit was presented for all-MOSFET bandgap voltage reference source.The difference between the pre-suppression voltage and the reference voltage was fixed to threshold voltage by a large width/length ratio of PMOSFET transistor and the negative feedback loop in the circuit.The stable pre-suppression voltage could greatly improve the line regulation,temperature stability and power supply rejection ratio.This chip was fabricated in Nuvoton 0.35μm 5Vstandard CMOS technology.The layout of the circuit occupied an active area of 64μm×136μm.Simulation results showed that the reference voltage was 1.53 V.The line adjustment rate was97.8μV/V under the power supply range from 3.4~5.5V.The PSRR of reference voltage was-143.2dB at 10 Hz,-123.3dB at 100 Hz,and 103.3dB at 1kHz respectively.The average temperature coefficient was 8.7×10^（-6）/℃ under the environment temperature range from-45 ℃to 125 ℃.