铜钼叠层基板的热学特性仿真研究

Simulation Study on Thermal Characteristics of Cu/Mo Laminated Composite Substrate

采用有限元方法,仿真研究了不同层数和材料厚度比的铜钼叠层基板对芯片散热特性的影响。结果表明,2层和3层的铜钼叠层材料均可以有效综合Cu高热导率和Mo低膨胀系数的优点。在相同铜钼总厚度比的情况下,相比于2层材料,3层材料可以实现更好的散热特性。对于1mm的基板厚度,铜钼铜厚度比为0.2∶0.6∶0.2时可以同时实现较低的温度和热应力。通过调整基板结构参数,可以显著改变芯片的最高温度和最大热应力,满足不同封装领域的需求。

A finite element thermal model of IC chip adopting Cu/Mo laminated composite substrate was established,and used to analyze the thermal characteristics with different layers and thickness-ratios substrate.Simulation results showed that the Cu/Mo laminated composite material could effectively integrate the advantages of high thermal conductivity and low thermal expansion coefficient.Compared with the two layer material,the Cu/Mo/Cu could achieve better thermal characteristics under same total thickness of Cu and Mo.When the thickness of substrate was 1mm and the Cu/Mo/Cu thickness ratio was 0.2：0.6：0.2,the system would obtain low maximum temperature and low maximum thermal stress at the same time.By adjusting structural parameters of the substrate,the maximum temperature and maximum thermal stress of the chip could be significantly affected,which would meet the needs of different packaging fields.