65nm近阈值SRAM稳定性分析

The Analysis of the Stability of 65 nm SRAM at Near Threshold Region

本文通过将供电电压降低到近阈值区域实现低功耗的目的.现有标准6T-SRAM在近阈值电压下的性能非常差,且受工艺波动的影响很大.因此,本文提出了一种新型的8T-SRAM,与近阈值电压下的6管单元相比,其静态功耗基本相同,读噪声容限也增加了一倍.因此使该新型8管单元在实现低功耗的基础上保证了读写的稳定性.另外针对工艺波动对读噪声容限的影响进行分析,与6T-SRAM相比,新型8T-SRAM受工艺波动的影响更小.

Reducing the supply voltage to the near threshold region is one method to reduce the power consumption.However,operating in this region the performance of 6T-SRAM is very poor,and more sensitive to the process variation.In this paper,we introduce a novel 8T-SRAM,when compared to the standard 6T-SRAM,they have the equal static power consumption,and its read noise margin has doubled.So this 8T-SRAM not only has low power consumption,but also has high stability.Further,the impact of process variation on the read noise margin has been analysed,when compared to 6T-SRAM,8T-SRAM is not sensitive to process variation.