提高3D NAND Flash竞争力的关键技术分析

Analysis of Key Technologies to Improve 3D NAND Flash Competitiveness

提升3D NAND Flash竞争力将渐受重视,美光与英特尔阵营所开发Cell on Peri构造可缩减采3D NAND Flash解决方案的芯片面积,由于三星已提出类似的构造,且东芝亦可引进使3D NAND Flash与其系统LSI结合,Cell on Peri构造有机会成为相关业者提升3D NAND Flash竞争力的技术之一。

Enhance 3D NAND Flash competitiveness will gradually attention. Micron and Intel developed Cell on Peri camp structure can be reduced by 3D NAND Flash chip solutions area. Because Samsung has proposed a similar structure, Toshiba can also be introduced to make 3D NAND Flash combined with its system LSI. Cell on Peri structure has the opportunity to become one of the relevant stakeholders to enhance the competitiveness of 3D NAND technology.