ADS模式低存储电容像素设计

Low storage capacitance pixel design of ADS mode

高级超维场转换技术(Advanced Super Dimension Switch,简称ADS)是以宽视角技术为代表的核心技术统称,其显示模式过大的存储电容(C_(st))成为限制Dual Gate GOA 4K TV应用的主要因素。在较短的充电时间内,像素为了维持相同的充电率,需要降低C_(st)。本文采用一种双条形电极ADS结构(Dual Slit ADS),其中像素电极与公共电极交叠区域形成ADS结构,像素电极与公共电极间隔区域形成共面转换(IPS)结构,通过减少像素电极与公共电极的交叠面积,起到降低ADS模式C_(st)的目的。模拟结果表明:当ADS显示模式采用Dual Slit ADS设计时,像素的C_(st)可以下降30%~40%。实验结果表明:采用Low Cst Pixel ADS设计时,VGH Margin可以增大2.5 V,但受到像素电极和公共电极的对位影响,透过率下降5%。

Advanced Super Dimension Switch（ADS） is a type of wide view TFT-LCD technology and widely used in the commercial TV display in recent years.However,the high Cst（capacitance storage）of ADS technology is the main restriction on Dual Gate GOA 4K TV.In order to maintain the same charging rate in smaller charging time,the pixel needs to reduce the Cst.In this structure,the ADS structure is formed by the overlapping area between the pixel electrode and the common electrode,a coplanar conversion（IPS） structure is formed between the pixel electrode and the common electrode space.By reducing the pixel and common electrode overlap areas,the storage capacitor of ADS mode are decreased.The simulation results show that the pixel Cst can drop 30%to 40%,when the Dual Slit ADS Design is used in ADS mode.The experimental results show that using the Low Cst Pixel ADS design,VGH Margin can be increased 2.5 V,but affected by the pixel electrode and the common electrode counterpoint,the transmittance will drop 5%.