碲锌镉半导体探测器漏电流和结电容的测试

Test of the Leakage Current and the Junction Capacitance for CdZnTe Semiconductor Detector

为进一步研究碲锌镉半导体探测器(简称CZT探测器)的特性,搭建了其漏电流和结电容等主要特性参数的测试平台,设计了测试方案,并在不同条件下测试了两种不同结构的探测器,分析了测试结果。通过本次实验,可较好地掌握CZT探测器的主要特性,从而为其在射线探测领域的应用提供参考依据。

In order to study the characteristics of CdZnTe （CZT） semiconductor detector further, this article not only builds the test platform for the main characteristic parameters （ the leakage current and the junction capaci- tance） and designs the test scheme, but also tests two detectors of different structures under different conditions and analyzes the test results. Through this experiment, we can better grasp the main features of the CZT detector, thus providing reference for its application in the field of radiation detection.