激光辅助阳极键合方法及实验研究

Method and Experimental Study on Laser Assisted Anodic Bonding

为了提高MEMS微器件成品的封装质量和效率,本文自主设计了新型的激光辅助阳极键合技术系统,并将其运用于硼硅玻璃BF33与硅的键合实验,成功实现了硅与玻璃在低功率下局部区域的完好键合.采用扫描电子显微镜对键合样本界面的微观结构进行分析,结果表明:在玻璃/硅的键合界面有明显的过渡层生成.使用能谱仪测定玻璃基体、过渡层以及硅层所含的化学元素种类及其质量分数,通过对比分析认为:激光在键合层的致热温度和界面区的强电场导致硼硅玻璃耗尽层中的氧负离子向键合界面迁移扩散,并与硅发生氧化反应形成中间过渡层,而该界面过渡层的形成是实现玻璃/硅键合的基本条件.该种新型键合技术操作简单、速度快、灵活性高,可以针对不同键合材料实时调整激光功率、行走速度、扫描时间等参数,可广泛应用于MEMS封装器件中硅与玻璃的键合.

To improve the packaging quality and efficiency of MEMS micro devices, a new bonding technique system named laser assisted anodic bonding is on the bonding of borosilicate glass BF33 and silicon. er. The microstructure of the bonding interface was designed, which was applied to experimental study Perfect localized bonding was achieved at low pow- analyzed by scanning electron microscope （SEM）. The results show that a transition layer was formed at the glass/silicon bonding interface. Energy dispersive spectrometer（EDS） was adopted to determine the type matrix, the transition layer and the silicon layer. Through and content of chemical elements in the glass comparative analysis of the chemical elements in the three layers, it is believed that, under the heat temperature of laser in the bonding layer and the strong electric field of the interfacial region, the O2- in the depletion layer of borosilicate glass drifted to the interface and then reacted with the silicon, forming the transition layer. And the formation of the interface transition layer is the basic condition for the realization of the glass/silicon bonding. This novel bonding technique has the advantages of simple operation, high speed and high flexibility. It can adjust the parameters such as laser power, walking speed and scanning time in real time for different bonding materials. This method can be widely used in MEMS packaging of silicon and glass bonding.