不同晶面单晶硅在飞秒激光作用下的行为特性

Behavior Characteristics of Different Crystal Surfaces of Monocrystal Silicon Under Femtosecond Laser Irradiation

不同晶面单晶硅的物理性能和化学性能的微小差异会对微纳加工结果产生明显影响。利用电子背散射衍射(EBSD)技术,研究了不同晶面单晶硅在飞秒激光作用下的行为特性。结果表明,(111)面单晶硅在飞秒激光能量密度低于和高于破坏阈值时分别形成非晶区和刻蚀区,而(100)面单晶硅在不同能量飞秒激光的作用下只形成刻蚀区。飞秒激光在微纳加工领域得到广泛应用,对晶体材料的不同晶面在飞秒激光作用下的行为特性的研究有助于制造新型微纳器件。

The tiny differences of physical performance and chemical performance among monocrystal silicons with various crystal surfaces have great effect on micronano processing results, and the behavior characteristics of different monocrystal silicon surfaces under femtosecond laser irradiation are studied by the electron backscatter diffraction （EBSD） technology. The results indicate that the amorphous region and the etching region are formed on the （111） surface of monocrystal silicon when the energy densities of femtosecond lasers are under and above the damage threshold. However, the etching region is formed only on the （111） surface of monocrystal silicon irradiated by femtosecond lasers with different energies. The femtosecond laser is widely used in micronano processing. The study of the behavior characteristics of different crystal surfaces irradiated by femtosecond laser is beneficial to fabricating novel micronano devices.