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磁控溅射ZnO薄膜的三阶非线性光学特性 被引量:3

Third-Order Nonlinear Optical Properties of ZnO Thin Film by Magnetron Sputtering
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摘要 采用磁控溅射技术在SiO_2衬底上制备ZnO薄膜,并通过X射线衍射仪、原子力显微镜、紫外-可见分光光度计和荧光光谱仪对薄膜的晶体结构、表面形貌、带隙宽度和光致发光性质进行测试表征,结合飞秒激光(波长为800nm,脉宽50fs)和Z扫描方法测量该薄膜的三阶非线性光学特性.结果表明,其三阶非线性折射率和非线性吸收系数均为正值,分别为3.50×10-18 m2/W和2.88×10-11 m/W. ZnO thin films were deposited on SiO2 substrate by magnetron sputtering technique. The crystal structure, surface topography, band gap width and photoluminescence properties of the thin films were characterized by X-ray diffraction, atomic force microscope, UV-Vis spectrophotometer and fluorescence spectrometer. The third order nonlinear optical properties of the thin films were measured by Z-scan method using femtosecond laser (wavelength of 800 nm, pulse width of 50 fs). The results show that the third order nonlinear refractive index and nonlinear absorption coefficient of the film are all positive, the values are 3.50×10-18 m2/W and 2.88×10-11 m/W.
作者 张继德 刘成有 辛春雨 于卓 董振江 ZHANG Jide LIU Chengyou XIN Chunyu YU Zhuo DONG Zhenjiang(School of Physics and Electronic Information, Baicheng Normal University, Baicheng 137000, J ilin Province, China School of Physics, Tonghua Normal University, Tonghua 134001, Jilin Province, China)
出处 《吉林大学学报(理学版)》 CAS CSCD 北大核心 2017年第1期145-149,共5页 Journal of Jilin University:Science Edition
基金 国家自然科学基金(批准号:20873052) 吉林省教育厅"十二五"科学技术研究项目(批准号:2013499)
关键词 磁控溅射 氧化锌薄膜 三阶非线性光学 Z扫描 magnetron sputtering zinc oxide thin film third-order nonlinear optics Z-scan
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  • 1杨修春,杜天伦,HOFMEISTER Herbert,DUBIEL Manferd,黄文旵.离子交换法在钠钙硅酸盐玻璃中原位合成银纳米颗粒的研究[J].硅酸盐学报,2005,33(11):1371-1375. 被引量:17
  • 2杨光,陈正豪.掺Ag纳米颗粒的BaTiO_3复合薄膜的非线性光学特性[J].物理学报,2007,56(2):1182-1187. 被引量:9
  • 3LiaoH B, Xiao R F, Wang H, Wong K S, Wong G K L 1998 Appl. Phys, Lett. 72 1817
  • 4Hashimoto T, Yamada T, Yoko T 1996 J. Appl. Phys. 811 3184
  • 5Ando M, Kadono K, Haruta M, Sakaguchi T, Miya M 1995 Nature 374 625
  • 6Ushio Y, Miyayama M, Yanagida H 1994 Sens. Actuators B 17 221
  • 7Sarkar S, Jana P K, Chaudhuri B K, Sakata H 2006 Appl. Phys. Lett. 89 212905
  • 8Kimura T, Sekio Y, Nakamura H, Siegrist T, Ramirez A P 2008 Nat. Mater. 7 291
  • 9Sheik-Bahae M, Said A A, Wel T H, Hagan D J, Van Stryland E W 1990 IEEE J. Quantum Electron. 26 760
  • 10Langford J I, Wilson A J C 1978 J. Appl. Cryst. 11 102

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