铜线键合塑封器件破坏性物理分析技术

Research of DPA Technology for Plastic-Packaged Devices of Copper Wire Bonding

铜线替代传统的金线键合已经成为半导体封装工艺发展的必然趋势,因其材料和制造工艺的特点,其破坏性物理分析方法不同于金线或铝线键合的器件。提出铜丝键合塑封器件破坏性物理分析的步骤及判据参照标准,讨论了器件激光开封技术的工艺步骤和参数值以及键合强度测试判据和典型断裂模式,以解决铜线键合塑封器件的破坏性物理分析问题。

Recently copper is replacing gold in semiconductor packaging. DPA （Destructive Physical Analysis） for copper wire bonding is quite different from that of gold/aluminum wire bonding. The paper presents the DPA flow and failure criteria, process flow and parameter in laser decap, and criteria and typical broken mode.