电子束退火法制备ZnO薄膜

Preparation of ZnO Thin Films by Electron Beam Annealing Method

利用溶胶-凝胶法制备出ZnO的凝胶前驱膜,用电子束退火取代传统炉子退火,对前驱膜进行后处理,退火时固定电子束加速电压为10kV,退火时间为5min,调节聚焦束流和电子束束流,使退火温度在600~900℃范围内变化。扫描电镜(SEM)、X射线衍射(XRD)、原子力显微镜(AFM)和压电力显微镜(PFM)的测试结果表明,运用电子束退火法可制备出晶粒尺寸小于30nm、沿(002)择优取向、具有压电效应的六方ZnO薄膜,且随着退火温度的升高,晶粒尺寸逐渐变大,薄膜的结晶性和取向变好,压电效应越来越明显。

The ZnO precursor film was prepared by sol-gel method and annealed by the electron beam which replaced the conventional furnace. The accelerating voltage was fixed at 10 kV and the annealing duration was fixed at 5 min. The annealing tempera- ture was within the range of 600 ℃to 900℃ by adjusting the focus beam current and electron beam current. The results of scanning electron microscopy （SEM）, X-ray diffraction （XRD）, atomic force microscopy （AFM） and piezoelectric force microscopy （PFM） showed that the annealed ZnO thin film was a kind of microcrystalline film, grew along the preferred （002） peak and presented piezo- electric effect. With the increase of annealing temperature, the grain size increased gradually, the erystallinity and orientation of thin film were better, the piezoelectric effect was more and more obvious.