背照式EMCCD背端处理技术研究

Research on Back End Processing Technology of Back Illuminated EMCCD

为了消除EMCCD芯片背面平坦抛光光敏区的物理机械缺陷、可动电荷、硅表面界面不连续等产生的电荷态,降低器件暗电流和光电转换效率。采用带介质低能硼注入及激光退火工艺技术,建立一个由P_指向P+的内建场;成功的将硼杂质激活,且结深小于0.1μm,形成了P+/P-型光敏区自建电场,满足BE背端处理的要求。

In order to eliminate the physical and mechanical defects on the EMCCD chip surface, the movable charges and the charges generated by the discontinuous silicon surface, the dark currents and the photoelectric conversion efficiency of the device are reduced. The technology with medium low energy boron implantation and laser annealing is adopted to build an internal field from a P_ to P ＋, which successfully activates the boron impurity. The junction depth is less than 0.1μm, and a P ＋/P-type photosensitive self-built electric field is created to meet the processing requirements of BE back end.