摘要
Crystallization of amorphous silicon（a-Si） which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization（MIC） polycrystalline silicon（poly-Si） regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84×10^-9cm^2/s at 550℃ is estimated for the trace nickel diffusion in a-Si.
Crystallization of amorphous silicon（a-Si） which starts from the middle of the a-Si region separating two adjacent metal-induced crystallization（MIC） polycrystalline silicon（poly-Si） regions is observed. The crystallization is found to be related to the distance between the neighboring nickel-introducing MIC windows. Trace nickel that diffuses from the MIC window into the a-Si matrix during the MIC heat-treatment is experimentally discovered, which is responsible for the crystallization of the a-Si beyond the MIC front. A minimum diffusion coefficient of 1.84×10^-9cm^2/s at 550℃ is estimated for the trace nickel diffusion in a-Si.
作者
张冬利
王明湘
王文
郭海成
Dongli Zhang Mingxiang Wang Man Wong Hoi-Sing Kwok(Department of Microelectronics, Soochow University, Suzhou 215006, China Center for Display Research, Department of Electronic and Computer Engineering, the Hong Kong University of Science and Technology, Kowloon, Hong Kong, China)
基金
supported by the National Natural Science Foundation of China(Grant Nos.61301077 and 61574096)
the Natural Science Foundation of Jiangsu Province,China(Grant No.BK20130319)
the Science and Technology Program of Suzhou City,China(Grant No.SYG201538)
