考虑底充胶固化过程的InSb面阵探测器结构分析模型

Structural model of In Sb IRFPAs including underfill curing process

液氮冲击中In Sb面阵探测器的易碎裂特性制约着探测器的成品率,建立适用于面阵探测器全工艺流程的结构模型是分析、优化探测器结构的有效手段.本文提出了用底充胶体积收缩率来描述底充胶在恒温固化中的体积收缩现象,同时忽略固化中底充胶弹性模量的变化来建立底充胶固化模型,给出了底充胶在恒温固化中生成的热应力/应变上限值.借鉴前期提出的等效建模思路,结合底充胶固化后的自然冷却过程和随后的液氮冲击实验,建立了适用于In Sb面阵探测器全工艺流程的结构分析模型.探测器历经底充胶固化、自然冷却至室温后的模拟结果与室温下拍摄的探测器形变分布照片高度符合.随后模拟液氮冲击实验,得到面阵探测器中累积的热应力/应变随温度的演变规律,热应力/应变值极值出现的温度区间与液氮冲击实验结果相符合.这表明所建模型适用于预测不同工艺阶段中面阵探测器的形变分布及演变规律.

InSb infrared focal plane array （IRFPA） detector, active in 3-5μm range, has been widely used in military fields. Higher fracture probability appearing in InSb infrared focal plane arrays （IRFPAs） subjected to thermal shock test, restricts its final yield. In order to analyze and optimize the structure of InSb IRFPAs, it is necessary to create the three-dimensional structural model of InSb IRFPAs, which is employed to estimate its strain distribution appearing in the different fabricating processes. In this paper, the curing model of underfill is described by its volume contraction percentage combined with the elastic modulus of the completely cured underfill. Thus, both the yon Mises stress and the Z-components of strain accumulated in the curing process of underfill are calculated. When InSb IRFPAs is naturally cooled to room temperature from the curing temperature of under fill, the Z-component of strain distribution appearing on the top surface of InSb IRFPAs is obtained with our structural model, which is identical to the deformation distribution on the top surface of InSb IRFPAs measured at room temperature. In the following thermal shock simulation, we find that the maximal von Mises stress appears at 100 K and the maximal Z-component of strain appears at 150 K, these two temperature points are located in the second half of the thermal shock process, these results indicate that the fracture of InSb chip happens more easily in liquid nitrogen shock test. This inference is consistent with the fact appearing in liquid nitrogen shock test. All these findings suggest that the proposed model is suitable to estimate the deformation distribution of InSb IRFPAs and its changing rule in its different fabricating stages.