不同厚度PZT薄膜的制备及电性能特性研究

Research on the Preparation and Electrical Properties with Different Thickness of the PZT Thin Films

采用sol-gel(溶胶-凝胶)法在Pt/Ti/SiO_2/Si基底上分别制备了厚度为400 nm、600 nm、800 nm的PZT(锆钛酸铅,Zr/Ti=52/48)薄膜,研究了厚度对薄膜介电性能与铁电性能的影响。通过对薄膜的铁电性能与介电性能进行测试,分析了不同厚度薄膜的剩余极化强度、介电常数与介电损耗,进一步分析了薄膜的介电调谐性能。实验结果表明,薄膜的介电常数与介电损耗随薄膜厚度的增大而增加;厚度为600 nm的薄膜具有最好的介电调谐性能与铁电性能。

PZT（Lead Zirconate Titanate,Zr/Ti=52/48）thin films with a thickness of 400 nm,600 nm and 800 nmwere prepared by sol-gel method on Pt/Ti/SiO_2/Si substrates,the electrical properties and ferroelectric properties ofthe PZT thin films with different thickness was researched. We tested the dielectric properties and ferroelectricproperties and analyzed the remnant polarization,dielectric constant and dielectric loss of the PZT thin films withdifferent thickness and further analyzed the dielectric tunable properties of thin films. The experimental resultsshowed that the dielectric constant and dielectric loss increase with the increase of film thickness,and the thicknessof 600 nm film has the best dielectric tunable properties of ferroelectric properties.ferroelectric thin filmsPZT thin filmssolgeldielectric propertiesferroelectric properties