基于聚乙烯咔唑的非挥发型阻变存储特性分析

Performance Analysis of Nonvolatile Resistive Switching Behavior Based on Poly(N-Vinyl Carbazole)

采用聚乙烯咔唑作为活性层构建了ITO/PVK/Al的三明治结构阻变存储元件,并对其阻变特性进行了测量。结果表明其具有明显的非挥发型双稳态阻变特性,具有WORM存储特性。该元件具有良好的数据保持能力和耐久能力,开关态电流比可达103,且具有较低的阈值转换电压。分别对低阻态和高阻态的载流子传输机制进行了拟合,低阻态为欧姆传导机制,高阻态为空间电荷限制电流发射机制。根据载流子传输机制,对阻变特性进行了解释。

Resistive switching device based on ITO/PVK/Al structure is fabricated to explore its resistive switchingcharacteristics. The resistive switching behavior is measured. The experiment results show that the devices exhibitwrite-once-read-many（WORM）storage characteristics,and good retention and endurance property. The I-V curvesfitting results show that the resistive switching mechanisms of the two states are different：the low resistance state isdue to ohmic conduction mechanism,the high resistance state is due to space-charge limited curren（tSCLC）mecha-nism. Subsequently,a resistive switching model for ITO/PVK/Al structure is proposed.