阻变存储器发展现状

Progress of the resistive random access memory

在纳米电子器件时代,来自量子隧穿和电容耦合等问题的挑战,使得Flash半导体存储器的发展遇到瓶颈。阻变存储器是忆阻器在二值情况下的特殊应用,因其结构简单、高密度、高速、低功耗、与CMOS工艺兼容以及具备三维集成能力,成为最具发展潜力的下一代非易失存储技术之一。在国内外学者的共同努力下,阻变存储器的研究已经取得了诸多突破性的进展。本文主要综述阻变存储器的发展历程、材料体系和阻变机理,并总结展望了阻变存储器进一步发展的优势和面临的挑战。

In the era of nanoelectronic devices, the challenges from the quantum tunneling and capacitor coupling effect make the flash semiconductor memory difficult to further scale down. Resistive random access memory （RRAM）, the binary application of memristor, has been the most promising candidate for the next generation non-volatile memory due to the simple structure, high density, high speed, low power consumption, compatible with CMOS process and the potential for three- dimensional integration. Recently, breakthrough progresses have been made in various aspects of RRAM. In this paper, we mainly review the development progress, materials and mechanisms in RRAM. Finally, the prospects and challenges of RRAM on the way to commercialization are summarized.