3D表面碳纳米管薄膜的生长及其强流脉冲发射的增强

Growth of CNT films on tridimensional surface and improvement on intense pulsed emission characteristics

本文采用气相化学沉积(CVD)法在具有镍层的三维硅基底上制备了碳纳米管薄膜(3D-CNTs),硅基底表面的三维微结构采用湿法刻蚀法制作,镍层采用化学镀的方法制备,碳纳米管生长均匀,列阵整齐,并垂直于基底表面。为了研究碳纳米管薄膜的强流脉冲发射特性,在相同的主Marx电压下采用二极结构(相同的二极管电压放电条件下)对碳纳米管薄膜进行重复脉冲发射实验。结果发现,在相同的脉冲电压下,3D-CNTs薄膜冷阴极相对平面基底上制备的碳纳米管薄膜(P-CNTs)冷阴极不仅有较高的强流脉冲发射电流和电流密度,还具有更好的强流脉冲发射稳定性。

Three dimensional carbon nanotube films（3D-CNTs） were synthesized on micro-structure of tridimensional Si substrate with Ni layer by chemical vapor deposition（CVD）. The CNT forest on the micro-structure surface are uniform, well aligned, and perpendicular to the substrate. In order to study the intense pulsed emission characteristics of CNTs cold cathode, the intense pulsed emission characteristics of CNTs cold cathode were measured repeatedly with a diode structure using a Marx generator as a voltage （under the same diode voltage discharge） source. It is found that 3D-CNTs （grown on tridimensional substrate） cold cathode can offer not only higher emission peak current and current densities, but also better stability than planar-grown CNTs （P-CNTs） cold cathode.