超连续谱光源辐照可见光CMOS图像传感器的实验研究

Experimental study on supercontinuum laser irradiating a visible light CMOS imaging sensor

研究了超连续谱光源对可见光CMOS图像传感器辐照的实验现象和规律。观察到随着入射激光功率的不断增大,CMOS图像传感器依次出现了像元饱和、局部饱和、局部过饱和以及全屏饱和等现象。与1 060 nm锁模光纤激光辐照同种图像传感器的实验相对比,从有效干扰面积、图像相关度及图像均方差等三个方面,对比了两种干扰源在影响CMOS图像传感器成像质量方面的异同,发现CMOS图像传感器的响应特性、激光的频谱特性和成像光学系统的色散是导致干扰效果差异的主要原因。

The experimental phenomena and laws of the supercontinuum laser irradiating the visible light CMOS image sensor were studied. Some typical interference phenomenon was observed with the incident laser power increasing, like pixels saturation, partial saturation, local supersaturation and full screen saturation of the output image with CMOS sensor. A comparison of the similarities and differences between the 1 060 nm mode-locked fiber laser and supercontinuum on affecting the quality of CMOS imagers was described from three aspects such as effective jamming area, image correlation and image variance. It is found that the response characteristic of CMOS image sensor, the spectrum characteristic of the laser and the dispersion of the imaging optical system lead to the difference of interference effects.