摘要
针对硅波导粗糙侧壁引起的散射损耗是影响SOI微环谐振腔传输性能主要因素的问题,采用热氧化对MEMS工艺制备的微环谐振腔粗糙侧壁进行表面光滑化修饰。利用耦合实验测试其传输性能,同时分析了热氧化温度与微环谐振腔传输特性之间的关系。实验结果表明,氧化温度在1 000℃时,硅波导粗糙侧壁改善效果明显,此时微环谐振腔具有较好的耦合效率和较高的Q值,Q值高达1.2×104。实验结果为硅波导传感器表面光滑化研究提供了重要的参考依据。
In view of silicon waveguide scattering loss caused by rough sidewalls is the main factors to affecting microring re- sonators transmisson, thermal oxidation process was applied to retouching the surface roughness of microring resonators which ;were fabricated by MEMS technology. Finally, the coupling experiment was carried out to test the transmission characteristic of microring resonators, and at the same time the relationships between temperature and the transmission characteristic were ana- lyzed. The experimental results show that at 1 000 ℃ ,the microring resonators have the better coupling efficiency and higher Q value, the Q value of the microring resonators in this fabrication is 1.2×10^4. This result provides a significant reference for surface-smoothing research of silicon waveguide sensor.
出处
《仪表技术与传感器》
CSCD
北大核心
2017年第1期126-129,共4页
Instrument Technique and Sensor
基金
国家自然科学基金项目(61675185,61275166)
山西省自然科学基金项目(2016010203100046)
山西省高等院校中青年拔尖创新人才及山西省高校“131”领导人才计划项目
中北大学杰出青年基金项目
关键词
微机电系统
绝缘体上硅
微环谐振腔
热氧化
品质因数
传输损耗
侧壁粗糙度
micro-electro-mechanical-system
silicon-on-insulator
microring resonator
thermal oxidation
quality factor
trans- mission loss
side wall roughness
