铜基体表面CVD单晶金刚石微粉的制备

Preparation of CVD microcrystalline diamond powders on Cu substrates

采用基体自形核法,研究了光滑铜基体表面超声研磨预处理对基体表面CVD单晶金刚石微粉沉积的影响。研究结果表明:未经超声研磨预处理的光滑铜基体表面,单晶金刚石微粉形核密度极低;预处理时间不超过1 min时,可以在光滑铜基体表面获得形核密度较高又不会相互连接的单晶金刚石微粉;预处理时间超过2 min时,形核密度过高,金刚石晶粒会相互连接,甚至生长成膜。本实验沉积出的金刚石微粉纯度高,非晶碳含量少,表面光滑,可以观察到(111)和(100)面,具有立方–八面体构型,符合高品级人造金刚石磨料的要求。

Ultrasonic grinding pretreatment is applied on Cu substrates to deposit microcrystalline diamonds with self-nucleation method by hot filament chemical vapor deposition（ HFCVD）. It is show that without ultrasonic grinding pretreatment,only a few microcrystalline diamonds can be deposited on the Cu substrate. When the duration of pretreatment is about 1 min,a large amount of microcrystalline diamonds is deposited on the substrates simultaneously. However,when the duration of pretreatment is more than 2 min,too many diamonds are deposited and there forms a diamond film on the substrate. The microcrystalline diamonds deposited by CVD methods exhibit a cubo-octahedral morphology and have the euhedral diamond faces with（ 111） and（ 100）.