非晶Tb-Gd-Co合金薄膜特性研究

On the Properties of Amorphous Tb-Gd-Co Alloy Thin Films

磁光存储材料的研充,最重要的是探求实用化磁光介质薄膜材料和制备工艺.非晶稀土-过渡金属（以下缩写为RE-TM）材料,适于使用制作磁光盘已崭露头角,由三元合金Gd-Fe-Co或Tb-Fe-Co膜做成的磁光盘样机已经问世.在以（Tb,Gd）x-（Fe,Co）1-x为基础的合金薄膜系列里,Tb-Gd-Co比Gd-Fe-Co有更大的矫顽力,这对提高存储密度是有利的.此外,Tb-Gd-Co材料还可以提供稍大的克尔（Kerr）旋转角θk和宽温特性.近年来,人们很重视非晶Tb-Gd-Co膜的研究,Togami首先报道Tb-Gd-Co膜,随后,Luborsky等人从实验肯定Tb-Gd-Co膜用作磁光介质的稳定性.为使Tb-Gd-Co材料达到实用化,本文研究了溅射参数对非晶Tb-Gd-Co合金薄膜特性的影响。

The magnetic and magneto-optic properties of amorphous Tb-Gd-Co alloy thin films were studied. Amorphous magnetic films of Tb-Gd-Co were prepared by magnetron r. f. sputtering technique from a composite target onto glass or polycarbonate (pc) substrates. The perpendicular anisotropy and Kerr Rotation angle of the film were found to be closely related to the substrate table bias voltage applied during sputtering and argon bleeding pressure. In the case of (Tb5Gd12)Co83 deposited at 0.4-0.7 Pa, Ku increases with increasing bias voltage Vb and reaches a maximum at Vb= -80 V but a rapid decrease ensued. The Kerr rotation angle QK also shows a similar dependence of Ka on Vb. The influence of the Vb on the perpendicular anisotropy can be explained by structural anisotropy such as the short range pair-ordering or columnar structure change due to a change of Vb The dependence of K on Vb is probably due to TM contents in amorphous RE-TM film under the control of Vb applied during sputtering.