摘要
对高频下的SiGe HBT器件击穿特性进行了研究。借助TCAD仿真工具,分析了影响器件击穿特性的基区Ge分布与集电区掺杂浓度超结结构。在3种不同Ge分布下,仿真结果表明,基区Ge的均匀分布有利于提高击穿电压;同时将超结结构引入集电区后,SiGe HBT器件的击穿电压提高了36%,由2.5V提高到3.4V。
The breakdown voltage of high frequency SiGe heterojunction devices（HBT）was studied. The effects of HBT base Ge profile and collector doping super-junction structure on the breakdown characteristics were analyzed by the TCAD simulation tools. The simulation results showed that breakdown voltages were enhanced by homogeneous Ge profiles of HBT base in three different Ge profiles. With the introduction of super-junction structure in the region of collector, the breakdown voltage of SiGe HBT was increased by 36%, which was from 2.5 V to 3.4V.
出处
《微电子学》
CAS
CSCD
北大核心
2017年第1期118-121,共4页
Microelectronics
基金
模拟集成电路重点实验室基金资助项目(0C09YJTJ1501)
