摘要
将化学机械抛光技术(Chemical Mechanical Polishing,CMP)引入到镁合金片的抛光中,以硅溶胶、表面活性剂、螯合剂及p H调节剂为原料,以涡流搅拌的方法制备镁合金(AZ91D)抛光液。采用单因素法分析抛光过程中压力、转速、抛光液流量及抛光时间等参数对抛光效果的影响。实验结果表明:在压力为0.06MPa,抛光盘上盘转速为10r/min、下盘转速为50r/min,抛光液流量为160m L/min,抛光时间为8min的条件下,镁合金表面形貌良好;在此工艺条件下经过化学机械抛光后,镁合金表面粗糙度Ra能达到10nm。
The Chemical Mechanical Polishing (CMP) technology was introduced into magnesium alloy surface ultra-precision process, silica sol, active agent, chelating agent, pH regulator was used to prepare polishing solution by vortex mixing. At the same time, the effect of pressure, rotation, flow rates of sully process and time on the polishing were analyzed by singer factor test. The experimental results showed that : the pressure is 0.06MPa, upper plate speed is 10r/min, lower plate speed is 50r/min, flow rates of slurry is 160mL/min ,polishing time is 8min, the alloy surface morphology is good ;under optimum conditions after chemical mechanical polishing,the surface roughness Ra of the alloy can reach 10nm.
出处
《现代制造工程》
CSCD
北大核心
2017年第2期30-34,共5页
Modern Manufacturing Engineering
基金
国家自然科学基金资助项目(51675232
51005102)
江苏高校品牌专业建设工程项目(PPZY2015B186)
江苏高校高级访问学者资助项目
江苏高校"青蓝工程"资助项目
苏州市教科研资助项目(GJNP201617)
苏工院教科研资助项目
关键词
化学机械抛光
镁合金
工艺参数
表面粗糙度
Chemical Mechanical Polishing(CMP)
magnesium alloy
process parameters
surface roughness